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| TP0610KL/BS250KL New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) -60 60 rDS(on) (W) 6 @ VGS = -10 V 10 @ VGS = -4.5 V VGS(th) (V) -1 to -3.0 1 30 ID (A) -0.27 -0.21 D TrenchFETr Power MOSFET D ESD Protected: 2000 V APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-226AA (TO-92) S G 1 Device Marking Front View 2 "S" TP 0610KL xxyy "S" = Siliconix Logo xxyy = Date Code TO-92-18RM (TO-18 Lead Form) D G 1 Device Marking Front View 2 "S" BS 250KL xxyy "S" = Siliconix Logo xxyy = Date Code G 100 W D D 3 Top View S 3 Top View Ordering Information: TP0610KL-TR1 Ordering Information: BS250KL-TR1 S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulse Drain Currenta TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD Limit -60 "20 -0.27 -0.22 -1.0 0.8 0.51 156 -55 to 150 Unit V A Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 72712 S-40244--Rev. A, 16-Feb-04 W _C/W _C RthJA TJ, Tstg www.vishay.com 1 TP0610KL/BS250KL Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS(th) VGS = 0 V, ID = -10 A VDS = VGS, ID = -250 A VDS = 0 V, VGS = "20 V Gate-Body Gate Body Leakage IGSS VDS = 0 V, VGS = "10 V VDS = 0 V, VGS = "10 V, TJ = 85_C VDS = 0 V, VGS = "5 V Zero Gate Voltage Drain Current On-State On State Drain Currenta IDSS ID( ) D(on) VDS = -60 V, VGS = 0 V VDS = -60 V, VGS = 0 V, TJ = 55_C VDS = -10 V, VGS = -4.5 V VDS = -10 V, VGS = -10 V VGS = -4.5 V, ID = -25 mA Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) gfs VSD VGS = -10 V, ID = -500 mA VGS = -10 V, ID = -500 mA, TJ = 125_C VDS = -10 V, ID = -100 mA IS = -200 mA, VGS = 0 V -50 -600 5.5 3.1 4.7 180 -0.9 -1.4 10 6 9 mS V W -60 -1 -2.1 -3.0 "10 "200 "500 "100 -1 -10 mA mA nA V mA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Turn On Time Turn-Off Turn Off Time Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = -25 V, RL = 150 W ID ^ -150 mA VGEN = -10 V mA, Rg = 10 W VDS = -30 V, VGS = -15 V, ID ^ -500 mA 1.7 0.26 0.46 285 2.4 15.5 21 12.5 5 25 35 20 ns W 3 nC Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. 1.0 Output Characteristics VGS = 10 V 1200 Transfer Characteristics TJ = -55_C 0.8 I D - Drain Current (A) 8V 7V I D - Drain Current (mA) 900 25_C 600 125_C 0.6 6V 0.4 5V 0.2 4V 0.0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) 300 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 72712 S-40244--Rev. A, 16-Feb-04 www.vishay.com 2 TP0610KL/BS250KL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Vishay Siliconix 20 On-Resistance vs. Drain Current 40 VGS = 0 V Capacitance r DS(on) - On-Resistance ( W ) 16 VGS = 4.5 V C - Capacitance (pF) 32 Ciss 24 12 VGS = 5 V 8 VGS = 10 V 16 Coss 8 Crss 4 0 0 200 400 600 800 1000 ID - Drain Current (mA) 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 15 V GS - Gate-to-Source Voltage (V) ID = 500 mA 12 Gate Charge 1.8 1.5 VDS = 30 V VDS = 48 V rDS(on) - On-Resiistance (Normalized) 1.2 0.9 0.6 0.3 0.0 -50 On-Resistance vs. Junction Temperature VGS = 10 V @ 500 mA 9 VGS = 4.5 V @ 25 mA 6 3 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) 10 Source-Drain Diode Forward Voltage 1000 VGS = 0 V r DS(on) - On-Resistance ( W ) On-Resistance vs. Gate-Source Voltage 8 ID = 500 mA I S - Source Current (A) 100 TJ = 125_C 6 4 10 TJ = 25_C TJ = -55_C ID = 200 mA 2 1 0.00 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Document Number: 72712 S-40244--Rev. A, 16-Feb-04 0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 TP0610KL/BS250KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Threshold Voltage Variance Over Temperature 0.5 0.4 V GS(th) Variance (V) 0.3 Power (W) 0.2 0.1 -0.0 -0.1 -0.2 -0.3 -50 0 -25 0 25 50 75 100 125 150 0.01 12 ID = 250 mA 20 Single Pulse Power, Junction-to-Ambient 16 8 4 0.1 1 Time (sec) 10 100 600 TJ - Junction Temperature (_C) 10 Safe Operating Area IDM Limited rDS(on) Limited 1 I D - Drain Current (A) 1 ms 10 ms 0.1 ID(on) Limited 0.01 TA = 25_C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 100 ms 1s 10 s dc 2 Normalized Effective Transient Thermal Impedance 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72712 S-40244--Rev. A, 16-Feb-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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